The P-Channel HEXFET Power MOSFET offer simplify circuitry while optimizing performance and parts count. A voltage between the gate and the source terminals enhances the conductivity and allows current to flow, while no drain current flows when the gate is shorted to the source. When a negative gate-source voltage (positive source-gate) is applied, it creates a p-channel at the surface of the n region, analogous to the n-channel case, but with opposite polarities of charges and voltages.
The following diagrams shows a Simplified Circuit of a P-Channel HEXFET Power MOSFET. It has an integral reverse rectifier, whose anode is connected to the drain. This diode has the same current handling capability as the transistor itself.